 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor 0.650.15 +0.2 unit: mm 0.650.15 2.8 -0.3 1.5 -0.05 +0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 2 1.45 +0.2 1.1 -0.1 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings -40 10 2 200 150 -55 to +150 Unit V mA mA mW C C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: HS s Electrical Characteristics (Ta = 25 3C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS IGSS VGDS VGSC | Yfs | Coss Conditions VDS = 10V, VGS = 0 VGS = -20V, VDS = 0 IG = -100A, VDS = 0 VDS = 10V, ID = 1A VDS = 10V, ID = 1A, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz 2.5 5 1 1 -40 -3.5 min 1.4 typ max 4.7 -1 Unit mA nA V V mS pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Note: The test method to comply with JISC7030, Field effect transistor test method. 0 to 0.1 s Absolute Maximum Ratings (Ta = 25C) 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 1 Silicon Junction FETs (Small Signal) PD Ta 250 12 Ta=25C 10 5 2SK2751 ID VDS 6 VDS=10V Ta=-25C 25C ID VGS Allowable power dissipation PD (mW) 200 75C Drain current ID (mA) 8 Drain current ID (mA) 12 150 VGS=0.6V 4 6 0.4V 4 0.2V 2 0V - 0.2V 3 100 2 50 1 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 -1 - 0.6 - 0.2 0.2 0.6 1 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS 12 12 | Yfs | ID Forward transfer admittance |Yfs| (mS) VDS=10V VDS=25V TC=25C 10 Forward transfer admittance |Yfs| (mS) 10 8 8 6 6 4 4 2 2 0 -1.6 0 -1.2 - 0.8 - 0.4 0 0.4 0 1 2 3 4 5 6 Gate to source voltage VGS (V) Drain current ID (mA) 2 |
Price & Availability of 2SK2751
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |